Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator

Basit Öğe Kaydı
dc.authoridhttps://orcid.org/0000-0001-8514-8263
dc.authoridhttps://orcid.org/0000-0001-9120-1673 View this author’s ORCID profile
dc.authorscopusid57208944724
dc.authorscopusid56584638800
dc.authorscopusid6507606965
dc.authorwosidDWR-1735-2022
dc.authorwosidFGD-9129-2022
dc.authorwosidBBE-4765-2022
dc.contributor.authorUzun, Utku
dc.contributor.authorLamuta, Caterina
dc.contributor.authorYetmez, Mehmet
dc.date.accessioned2023-11-22T11:02:09Z
dc.date.available2023-11-22T11:02:09Z
dc.date.issued2022
dc.departmentFakülteler, Havacılık ve Uzay Bilimleri Fakültesi, Havacılık ve Uzay Mühendisliği Bölümü
dc.description.abstractA single-crystal Bi2Se3 topological insulator is fabricated using the Bridgman-Stockbarger method. The crystal structure and atomic lattice parameters are identified by X-ray diffraction analysis. The nanoindentation size effect on creep displacement, activation volume, and strain rate sensitivity (SRS) with different maximum holding loads between 1000 and 5000 mu N is investigated using depth-sensing nanoindentation. Furthermore, the effect of the loading rate on the steady-state creep displacement and SRS is analyzed and discussed. Results show Bi2Se3's low resistance to plastic deformation and a significant increase of creep displacement with increasing holding load and holding rate. Additionally, creep strain rate, activation volume, and SRS are also calculated from the secondary stage creep, and results are compared with those of other flexible electronic materials.
dc.identifier.citationUzun, U., Lamuta, C., ve Yetmez, M. (2022). Nanoindentation creep behavior of single-crystal Bi2Se3 topological insulator.Physica Status Solidi B-Basic Solid State Pyhsics, 259(4).
dc.identifier.doi10.1002/pssb.202100481
dc.identifier.endpage9en_US
dc.identifier.issn1521-3951
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85122863842
dc.identifier.scopusqualityQ3
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1002/pssb.202100481
dc.identifier.urihttps://hdl.handle.net/20.500.13099/183
dc.identifier.volume259en_US
dc.identifier.wosWOS:000744322000001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorUzun, Utku
dc.language.isoen
dc.publisherWiley
dc.relation.ispartofPhysica Status Solidi B-Basic Solid State Pyhsics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/OpenAccess
dc.subjectactivation volume
dc.subjectbismuth selenide
dc.subjectcreep
dc.subjectsingle crystal
dc.subjectstrain rate
dc.subjectsensitivity
dc.subjectChemical activation
dc.subjectCreep
dc.subjectCrystal atomic structure
dc.subjectElectric insulators
dc.subjectNanoindentation
dc.subjectSelenium compounds
dc.subjectSingle crystals
dc.subjectStrain rate
dc.subjectX ray powder diffraction
dc.subjectActivation straine
dc.subjectActivation volume
dc.subjectBridgman-Stockbarger method
dc.subjectCreep behaviors
dc.subjectCreep displacement
dc.subjectCrystals structures
dc.subjectNanoindentation creeps
dc.subjectStrain-rate sensitivity
dc.subjectTopological insulators
dc.subjectVolume rate
dc.titleNanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
Physica Status Solidi b - 2022 - Uzun - Nanoindentation Creep Behavior of Single‐Crystal Bi2Se3 Topological Insulator.pdf
Boyut:
1.64 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Makale Dosyası
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Havacılık ve Uzay Bilimleri Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu