Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator

Basit Öğe Kaydı
dc.authoridhttps://orcid.org/0000-0001-8514-8263en_US
dc.authoridhttps://orcid.org/0000-0001-9120-1673 View this author’s ORCID profileen_US
dc.authorscopusid57208944724en_US
dc.authorscopusid56584638800en_US
dc.authorscopusid6507606965en_US
dc.authorwosidDWR-1735-2022en_US
dc.authorwosidFGD-9129-2022en_US
dc.authorwosidBBE-4765-2022en_US
dc.contributor.authorUzun, Utku
dc.contributor.authorLamuta, Caterina
dc.contributor.authorYetmez, Mehmet
dc.date.accessioned2023-11-22T11:02:09Z
dc.date.available2023-11-22T11:02:09Z
dc.date.issued2022en_US
dc.departmentFakülteler, Havacılık ve Uzay Bilimleri Fakültesi, Havacılık ve Uzay Mühendisliği Bölümüen_US
dc.description.abstractA single-crystal Bi2Se3 topological insulator is fabricated using the Bridgman-Stockbarger method. The crystal structure and atomic lattice parameters are identified by X-ray diffraction analysis. The nanoindentation size effect on creep displacement, activation volume, and strain rate sensitivity (SRS) with different maximum holding loads between 1000 and 5000 mu N is investigated using depth-sensing nanoindentation. Furthermore, the effect of the loading rate on the steady-state creep displacement and SRS is analyzed and discussed. Results show Bi2Se3's low resistance to plastic deformation and a significant increase of creep displacement with increasing holding load and holding rate. Additionally, creep strain rate, activation volume, and SRS are also calculated from the secondary stage creep, and results are compared with those of other flexible electronic materials.en_US
dc.identifier.citationUzun, U., Lamuta, C., ve Yetmez, M. (2022). Nanoindentation creep behavior of single-crystal Bi2Se3 topological insulator.Physica Status Solidi B-Basic Solid State Pyhsics, 259(4).en_US
dc.identifier.doi10.1002/pssb.202100481en_US
dc.identifier.endpage9en_US
dc.identifier.issn1521-3951
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85122863842en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1002/pssb.202100481
dc.identifier.urihttps://hdl.handle.net/20.500.13099/183
dc.identifier.volume259en_US
dc.identifier.wosWOS:000744322000001en_US
dc.identifier.wosqualityQ3en_US
dc.institutionauthorUzun, Utku
dc.language.isoengen_US
dc.publisherWileyen_US
dc.relation.ispartofPhysica Status Solidi B-Basic Solid State Pyhsicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/OpenAccessen_US
dc.subjectactivation volumeen_US
dc.subjectbismuth selenideen_US
dc.subjectcreepen_US
dc.subjectsingle crystalen_US
dc.subjectstrain rateen_US
dc.subjectsensitivityen_US
dc.subjectChemical activationen_US
dc.subjectCreepen_US
dc.subjectCrystal atomic structureen_US
dc.subjectElectric insulatorsen_US
dc.subjectNanoindentationen_US
dc.subjectSelenium compoundsen_US
dc.subjectSingle crystalsen_US
dc.subjectStrain rateen_US
dc.subjectX ray powder diffractionen_US
dc.subjectActivation straineen_US
dc.subjectActivation volumeen_US
dc.subjectBridgman-Stockbarger methoden_US
dc.subjectCreep behaviorsen_US
dc.subjectCreep displacementen_US
dc.subjectCrystals structuresen_US
dc.subjectNanoindentation creepsen_US
dc.subjectStrain-rate sensitivityen_US
dc.subjectTopological insulatorsen_US
dc.subjectVolume rateen_US
dc.titleNanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulatoren_US
dc.typearticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
Physica Status Solidi b - 2022 - Uzun - Nanoindentation Creep Behavior of Single‐Crystal Bi2Se3 Topological Insulator.pdf
Boyut:
1.64 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Makale Dosyası
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Havacılık ve Uzay Bilimleri Fakültesi Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu