Nanoindentation Creep Behavior of Single-Crystal Bi2Se3 Topological Insulator
Yükleniyor...
Tarih
2022
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Wiley
Erişim Hakkı
info:eu-repo/semantics/OpenAccess
Özet
A single-crystal Bi2Se3 topological insulator is fabricated using the Bridgman-Stockbarger method. The crystal structure and atomic lattice parameters are identified by X-ray diffraction analysis. The nanoindentation size effect on creep displacement, activation volume, and strain rate sensitivity (SRS) with different maximum holding loads between 1000 and 5000 mu N is investigated using depth-sensing nanoindentation. Furthermore, the effect of the loading rate on the steady-state creep displacement and SRS is analyzed and discussed. Results show Bi2Se3's low resistance to plastic deformation and a significant increase of creep displacement with increasing holding load and holding rate. Additionally, creep strain rate, activation volume, and SRS are also calculated from the secondary stage creep, and results are compared with those of other flexible electronic materials.
Açıklama
Anahtar Kelimeler
activation volume, bismuth selenide, creep, single crystal, strain rate, sensitivity, Chemical activation, Creep, Crystal atomic structure, Electric insulators, Nanoindentation, Selenium compounds, Single crystals, Strain rate, X ray powder diffraction, Activation straine, Activation volume, Bridgman-Stockbarger method, Creep behaviors, Creep displacement, Crystals structures, Nanoindentation creeps, Strain-rate sensitivity, Topological insulators, Volume rate
Kaynak
Physica Status Solidi B-Basic Solid State Pyhsics
WoS Q Değeri
Q3
Scopus Q Değeri
Cilt
259
Sayı
4
Künye
Uzun, U., Lamuta, C., ve Yetmez, M. (2022). Nanoindentation creep behavior of single-crystal Bi2Se3 topological insulator.Physica Status Solidi B-Basic Solid State Pyhsics, 259(4).
