Influence of Sn substitution on the electronic structure of ThGeO4 semiconductors

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dc.contributor.authorOzkendir, O. M.
dc.date.accessioned2025-03-17T12:27:47Z
dc.date.available2025-03-17T12:27:47Z
dc.date.issued2021
dc.departmentTarsus Üniversitesi
dc.description.abstractThGeO4 (TGO) material is an actinide semiconductor with a wide bandgap. The influence of Sn substitution in the Ge coordinations has probed by the x-ray absorption fine structure (XAFS) spectroscopy calculations. Calculations were performed for Th L-3-edge and O K-edge to study the influence of both Ge and the substituted Sn atoms on the electronic structure of the thorium atoms. ThO2 material's calculation has been used as reference material during the analysis and the analysis have shown that unoccupied 6d levels of the Th atoms' were hybridized with 2p levels of the oxygen to build up molecular bands.
dc.identifier.endpage198
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue3-4
dc.identifier.scopus2-s2.0-85111992210
dc.identifier.scopusqualityQ4
dc.identifier.startpage193
dc.identifier.urihttps://hdl.handle.net/20.500.13099/2435
dc.identifier.volume23
dc.identifier.wosWOS:000664792900014
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorOzkendir, O. M.
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250316
dc.subjectActinides
dc.subjectThorium
dc.subjectSemiconductors
dc.subjectAbsorption spectroscopy
dc.titleInfluence of Sn substitution on the electronic structure of ThGeO4 semiconductors
dc.typeArticle

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