Influence of Sn substitution on the electronic structure of ThGeO4 semiconductors
[ X ]
Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Natl Inst Optoelectronics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
ThGeO4 (TGO) material is an actinide semiconductor with a wide bandgap. The influence of Sn substitution in the Ge coordinations has probed by the x-ray absorption fine structure (XAFS) spectroscopy calculations. Calculations were performed for Th L-3-edge and O K-edge to study the influence of both Ge and the substituted Sn atoms on the electronic structure of the thorium atoms. ThO2 material's calculation has been used as reference material during the analysis and the analysis have shown that unoccupied 6d levels of the Th atoms' were hybridized with 2p levels of the oxygen to build up molecular bands.
Açıklama
Anahtar Kelimeler
Actinides, Thorium, Semiconductors, Absorption spectroscopy
Kaynak
Journal of Optoelectronics and Advanced Materials
WoS Q Değeri
Q4
Scopus Q Değeri
Q4
Cilt
23
Sayı
3-4
