XAFS study on the boron substituted LiGaO2 semiconductor material

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dc.authoridGunaydin, Selen/0000-0002-5027-1242
dc.contributor.authorGundogmus, Hakan
dc.contributor.authorGunaydin, Selen
dc.contributor.authorKlysubun, Wantana
dc.contributor.authorOzkendir, Osman Murat
dc.date.accessioned2025-03-17T12:25:56Z
dc.date.available2025-03-17T12:25:56Z
dc.date.issued2020
dc.departmentTarsus Üniversitesi
dc.description.abstractAn XAFS study was performed on the electronic and crystal structure properties of LiGa1-xBxO2 (LGO) material in where boron atoms were substituted at the gallium sites. Studies were carried out by the X-ray powder diffraction (XRD) patterns and supported by the Extended-XAFS data. The analysis on the substituted materials revealed interesting mechanisms at the boron sites that preserved the crystal symmetry in the entire bulk. It was determined that, boron atoms do not lie in the Ga sites due to inequivalent ionic radii and formed a crystal LiB3O5, which has the same crystal geometry and space group of the parent LGO. With the presence of the boron atoms on the vicinity of the gallium atoms, tiny shifts on the main edge spectra resulted from the change in the oxidation of the gallium atoms.
dc.description.sponsorshipResearch Fund of Hakkari University (Hakkari, Turkey) [FM2017BAP1]
dc.description.sponsorshipThis work is supported by Research Fund of Hakkari University (Hakkari, Turkey) under Grant Contract No. FM2017BAP1.
dc.identifier.doi10.1016/j.ssi.2019.115201
dc.identifier.issn0167-2738
dc.identifier.issn1872-7689
dc.identifier.scopus2-s2.0-85076852492
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.ssi.2019.115201
dc.identifier.urihttps://hdl.handle.net/20.500.13099/1944
dc.identifier.volume346
dc.identifier.wosWOS:000517851600001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofSolid State Ionics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250316
dc.subjectSemiconductors
dc.subjectLithium gallate
dc.subjectAbsorption spectroscopy
dc.subjectElectronic structure
dc.titleXAFS study on the boron substituted LiGaO2 semiconductor material
dc.typeArticle

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