XAFS study on the boron substituted LiGaO2 semiconductor material
[ X ]
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An XAFS study was performed on the electronic and crystal structure properties of LiGa1-xBxO2 (LGO) material in where boron atoms were substituted at the gallium sites. Studies were carried out by the X-ray powder diffraction (XRD) patterns and supported by the Extended-XAFS data. The analysis on the substituted materials revealed interesting mechanisms at the boron sites that preserved the crystal symmetry in the entire bulk. It was determined that, boron atoms do not lie in the Ga sites due to inequivalent ionic radii and formed a crystal LiB3O5, which has the same crystal geometry and space group of the parent LGO. With the presence of the boron atoms on the vicinity of the gallium atoms, tiny shifts on the main edge spectra resulted from the change in the oxidation of the gallium atoms.
Açıklama
Anahtar Kelimeler
Semiconductors, Lithium gallate, Absorption spectroscopy, Electronic structure
Kaynak
Solid State Ionics
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
346