Ozkendir, O. M.2025-03-172025-03-1720211454-41641841-7132https://hdl.handle.net/20.500.13099/2435ThGeO4 (TGO) material is an actinide semiconductor with a wide bandgap. The influence of Sn substitution in the Ge coordinations has probed by the x-ray absorption fine structure (XAFS) spectroscopy calculations. Calculations were performed for Th L-3-edge and O K-edge to study the influence of both Ge and the substituted Sn atoms on the electronic structure of the thorium atoms. ThO2 material's calculation has been used as reference material during the analysis and the analysis have shown that unoccupied 6d levels of the Th atoms' were hybridized with 2p levels of the oxygen to build up molecular bands.eninfo:eu-repo/semantics/closedAccessActinidesThoriumSemiconductorsAbsorption spectroscopyArticle233-4193198Q4WOS:0006647929000142-s2.0-85111992210Q4