The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device

dc.authoridhttps://orcid.org/0000-0003-2807-0425en_US
dc.authoridhttps://orcid.org/0000-0002-9164-0446en_US
dc.authorscopusid36088420200en_US
dc.authorscopusid36703032500en_US
dc.authorwosidAAM-8078-2020en_US
dc.authorwosidGAX-8725-2022en_US
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorOcakoğlu, Kasım
dc.contributor.authorİnce, Mine
dc.contributor.authorKarabulut, Abdülkerim
dc.contributor.authorTataroğlu, A.
dc.contributor.authorDere, Ayşegül
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2024-08-06T09:19:57Z
dc.date.available2024-08-06T09:19:57Z
dc.date.issued2024en_US
dc.departmentFakülteler, Mühendislik Fakültesi, Mühendislik Temel Bilimleri Bölümüen_US
dc.description.abstractIn this study, the effects of illumination on the electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si/Al photonic device have been investigated under dark and various lighting conditions. The diode’s electronic parameters have been extracted from the current–voltage characteristics. It is observed that the dark current value increases when the light is illuminated on the device, and thus, the photocurrent is formed, and this result has shown that the studied device exhibits a photoconductive behavior. The photoresponse properties of the fabricated device have been examined by transient photocurrent measurements under 100 mW/cm2 illumination, and they have also been analyzed using photocapacitance and photoconductivity measurements at different frequencies (100 kHz, 500 kHz, and 1 MHz). However, the capacitance data that may occur between the poles of the produced device have also been investigated, and it is thought that the device can also be developed as a capacitor. These results confirm that the hydroxymethyl functionalized Zn(II)Pc and p-silicon semiconductor-based device can be used particularly in electro-optic and photonic applications.en_US
dc.identifier.citationAl-Sehemi, A.G., Ocakoglu, K., Ince, M. et al. The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device. Polym. Bull. 81, 4351–4368 (2024). https://doi.org/10.1007/s00289-023-04906-2en_US
dc.identifier.doi10.1007/s00289-023-04906-2en_US
dc.identifier.endpage4368en_US
dc.identifier.issn0170-0839
dc.identifier.issn1436-2449
dc.identifier.issue5en_US
dc.identifier.startpage4351en_US
dc.identifier.urihttps://link.springer.com/article/10.1007/s00289-023-04906-2
dc.identifier.urihttps://hdl.handle.net/20.500.13099/327
dc.identifier.volume81en_US
dc.identifier.wosqualityQ2en_US
dc.institutionauthorOcakoğlu, Kasım
dc.institutionauthorİn, Mine
dc.language.isoengen_US
dc.publisherSpringer Linken_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_US
dc.subjectPhotodiodeen_US
dc.subjectPhotoresponseen_US
dc.subjectIllumination efecten_US
dc.subjectTransient measurementsen_US
dc.subjectFrequency efecten_US
dc.titleThe electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic deviceen_US
dc.typearticleen_US

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