The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device

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dc.authoridhttps://orcid.org/0000-0003-2807-0425
dc.authoridhttps://orcid.org/0000-0002-9164-0446
dc.authorscopusid36088420200
dc.authorscopusid36703032500
dc.authorwosidAAM-8078-2020
dc.authorwosidGAX-8725-2022
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorOcakoğlu, Kasım
dc.contributor.authorİnce, Mine
dc.contributor.authorKarabulut, Abdülkerim
dc.contributor.authorTataroğlu, A.
dc.contributor.authorDere, Ayşegül
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2024-08-06T09:19:57Z
dc.date.available2024-08-06T09:19:57Z
dc.date.issued2024
dc.departmentFakülteler, Mühendislik Fakültesi, Mühendislik Temel Bilimleri Bölümü
dc.description.abstractIn this study, the effects of illumination on the electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si/Al photonic device have been investigated under dark and various lighting conditions. The diode’s electronic parameters have been extracted from the current–voltage characteristics. It is observed that the dark current value increases when the light is illuminated on the device, and thus, the photocurrent is formed, and this result has shown that the studied device exhibits a photoconductive behavior. The photoresponse properties of the fabricated device have been examined by transient photocurrent measurements under 100 mW/cm2 illumination, and they have also been analyzed using photocapacitance and photoconductivity measurements at different frequencies (100 kHz, 500 kHz, and 1 MHz). However, the capacitance data that may occur between the poles of the produced device have also been investigated, and it is thought that the device can also be developed as a capacitor. These results confirm that the hydroxymethyl functionalized Zn(II)Pc and p-silicon semiconductor-based device can be used particularly in electro-optic and photonic applications.
dc.identifier.citationAl-Sehemi, A.G., Ocakoglu, K., Ince, M. et al. The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device. Polym. Bull. 81, 4351–4368 (2024). https://doi.org/10.1007/s00289-023-04906-2
dc.identifier.doi10.1007/s00289-023-04906-2
dc.identifier.endpage4368en_US
dc.identifier.issn0170-0839
dc.identifier.issn1436-2449
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-85165206029
dc.identifier.startpage4351en_US
dc.identifier.urihttps://link.springer.com/article/10.1007/s00289-023-04906-2
dc.identifier.urihttps://hdl.handle.net/20.500.13099/327
dc.identifier.volume81en_US
dc.identifier.wosWOS:001033729200001
dc.identifier.wosqualityQ2
dc.institutionauthorOcakoğlu, Kasım
dc.institutionauthorİn, Mine
dc.language.isoen
dc.publisherSpringer Link
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectPhotodiode
dc.subjectPhotoresponse
dc.subjectIllumination efect
dc.subjectTransient measurements
dc.subjectFrequency efect
dc.titleThe electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device
dc.typeArticle

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