Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes

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dc.authoridDEMIREZEN, SELCUK/0000-0001-7462-0251
dc.authoridYUZER, ABDULCELIL/0000-0002-2287-4126
dc.contributor.authorDemirezen, S.
dc.contributor.authorAl-Sehemi, A. G.
dc.contributor.authorYuzer, A.
dc.contributor.authorInce, M.
dc.contributor.authorDere, A.
dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2025-03-17T12:27:36Z
dc.date.available2025-03-17T12:27:36Z
dc.date.issued2022
dc.departmentTarsus Üniversitesi
dc.description.abstractIn this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated at room temperature using by current-voltage/time (I-V/t) and capacitance/conductance-voltage/frequency (C/G-V/f) measurements under dark and various solar irradiances (between 10 and 100 mW/cm(2)). The main electronic parameters of the diode, which included ideality factor (n), barrier height (phi(b)), rectification ratio (RR = I-F/I-R), series resistance (R-s), and interface states density (N-ss) were computed. The experimental results reveal that the photocurrent level of the diodes is controlled by various solar irradiances. The m exponent of the double-logarithmic I-ph-P plot was found to be 1.12, confirming linear photoconduction behavior. The Al/symmetrical CuPc/p-Si structure can be used as a photo device/sensor in electro-optic and photonics.
dc.description.sponsorshipKing Khalid University [RCAMS/KKU/p002-21]; Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia
dc.description.sponsorshipAuthors would like to acknowledge the support of the King Khalid University for this research through grant #RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia
dc.identifier.doi10.1007/s10854-022-08906-2
dc.identifier.endpage21021
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue26
dc.identifier.scopus2-s2.0-85136104634
dc.identifier.scopusqualityQ2
dc.identifier.startpage21011
dc.identifier.urihttps://doi.org/10.1007/s10854-022-08906-2
dc.identifier.urihttps://hdl.handle.net/20.500.13099/2343
dc.identifier.volume33
dc.identifier.wosWOS:000841695900006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250316
dc.subjectVoltage Characteristics
dc.subjectCapacitance-Voltage
dc.subjectTemperature
dc.subjectDependence
dc.titleElectrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
dc.typeArticle

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