Yazar "Yakuphanoglu, F." seçeneğine göre listele

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  • [ X ]
    Öğe
    Electrical characteristics and photosensing properties of Al/symmetrical CuPc/p-Si photodiodes
    (Springer, 2022) Demirezen, S.; Al-Sehemi, A. G.; Yuzer, A.; Ince, M.; Dere, A.; Al-Ghamdi, A. A.; Yakuphanoglu, F.
    In this study, the symmetrical copper-phthalocyanine (CuPc) was coated on p-Si wafer by spin-coating method. The photoresponse and electrical properties of the Al/symmetrical CuPc/p-Si structures/diodes were investigated at room temperature using by current-voltage/time (I-V/t) and capacitance/conductance-voltage/frequency (C/G-V/f) measurements under dark and various solar irradiances (between 10 and 100 mW/cm(2)). The main electronic parameters of the diode, which included ideality factor (n), barrier height (phi(b)), rectification ratio (RR = I-F/I-R), series resistance (R-s), and interface states density (N-ss) were computed. The experimental results reveal that the photocurrent level of the diodes is controlled by various solar irradiances. The m exponent of the double-logarithmic I-ph-P plot was found to be 1.12, confirming linear photoconduction behavior. The Al/symmetrical CuPc/p-Si structure can be used as a photo device/sensor in electro-optic and photonics.
  • [ X ]
    Öğe
    The electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si photonic device
    (Springer Link, 2024) Al-Sehemi, Abdullah G.; Ocakoğlu, Kasım; İnce, Mine; Karabulut, Abdülkerim; Tataroğlu, A.; Dere, Ayşegül; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.
    In this study, the effects of illumination on the electronic and optoelectronic properties of Al/hydroxymethyl functionalized Zn(II)Pc/p-Si/Al photonic device have been investigated under dark and various lighting conditions. The diode’s electronic parameters have been extracted from the current–voltage characteristics. It is observed that the dark current value increases when the light is illuminated on the device, and thus, the photocurrent is formed, and this result has shown that the studied device exhibits a photoconductive behavior. The photoresponse properties of the fabricated device have been examined by transient photocurrent measurements under 100 mW/cm2 illumination, and they have also been analyzed using photocapacitance and photoconductivity measurements at different frequencies (100 kHz, 500 kHz, and 1 MHz). However, the capacitance data that may occur between the poles of the produced device have also been investigated, and it is thought that the device can also be developed as a capacitor. These results confirm that the hydroxymethyl functionalized Zn(II)Pc and p-silicon semiconductor-based device can be used particularly in electro-optic and photonic applications.